| PART |
Description |
Maker |
| HMC-APH196 |
GaAs HEMT MMIC MEDIUM POWER AMPLIFIER, 17 - 30 GHz
GaAs HEMT MMIC POWER AMPLIFIER
|
Hittite Microwave Corporation
|
| HMC-APH460 |
GaAs HEMT MMIC POWER AMPLIFIER
GaAs HEMT MMIC 0.5 WATT POWER AMPLIFIER, 27 - 31.5 GHz
|
Hittite Microwave Corporation
|
| MGF0911A 0911A |
From old datasheet system
MITSUBISHI SEMICONDUCTOR (GaAs FET) L, S BAND POWER GaAs FET
|
MITSUBISHI[Mitsubishi Electric Semiconductor]
Mitsubishi Electric Corporation
|
| NES1821B-30 |
30W L-BAND POWER GaAs FET N-CHANNEL GaAs MES FET
|
NEC Corp.
NEC[NEC]
|
| NE8500100 NE8500100-RG NE8500100-WB NE500100 NE500 |
1 W C-BAND POWER GaAs FET N-CHANNEL GaAs MES FET
|
NEC Corp.
NEC[NEC]
|
| HMC-AUH249 |
GaAs HEMT MMIC MODULATOR DRIVER AMPLIFIER
|
Analog Devices
|
| HMC-ALH216 |
GaAs HEMT MMIC LOW NOISE AMPLIFIER
|
Analog Devices
|
| HMC-ALH508 |
GaAs HEMT LOW NOISE AMPLIFIER, 71 - 86 GHz
|
Hittite Microwave Corporation
|
| HMC-ALH509 |
GaAs HEMT LOW NOISE AMPLIFIER, 71 - 86 GHz
|
Hittite Microwave Corporation
|
